Filtros : "Caillat, Christian" Limpar

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  • Source: Solid-State Electronics. Unidade: EP

    Assunto: TRANSISTORES

    Acesso à fonteDOIHow to cite
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    • ABNT

      AOULAICHE, Marc et al. Understanding and optimizing the floating body retention in FDSOI UTBOX. Solid-State Electronics, v. 117, p. 123-129, 2016Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2015.11.021. Acesso em: 28 abr. 2024.
    • APA

      Aoulaiche, M., Bourdelle, K. K., Witters, L. J., Caillat, C., Simoen, E., & Martino, J. A. (2016). Understanding and optimizing the floating body retention in FDSOI UTBOX. Solid-State Electronics, 117, 123-129. doi:10.1016/j.sse.2015.11.021
    • NLM

      Aoulaiche M, Bourdelle KK, Witters LJ, Caillat C, Simoen E, Martino JA. Understanding and optimizing the floating body retention in FDSOI UTBOX [Internet]. Solid-State Electronics. 2016 ; 117 123-129.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.sse.2015.11.021
    • Vancouver

      Aoulaiche M, Bourdelle KK, Witters LJ, Caillat C, Simoen E, Martino JA. Understanding and optimizing the floating body retention in FDSOI UTBOX [Internet]. Solid-State Electronics. 2016 ; 117 123-129.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.sse.2015.11.021
  • Source: Solid-State Electronics Volume 90, December 2013, Pages 149-154. Unidade: EP

    Assunto: SIMULAÇÃO

    Acesso à fonteDOIHow to cite
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    • ABNT

      ALMEIDA, Luciano Mendes et al. Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM. Solid-State Electronics Volume 90, December 2013, Pages 149-154, v. 90, p. 149-154, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.038. Acesso em: 28 abr. 2024.
    • APA

      Almeida, L. M., Sasaki, K. R. A., Caillat, C., Aoulaiche, M., Collaert, N., Jurczak, M., et al. (2013). Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM. Solid-State Electronics Volume 90, December 2013, Pages 149-154, 90, 149-154. doi:10.1016/j.sse.2013.02.038
    • NLM

      Almeida LM, Sasaki KRA, Caillat C, Aoulaiche M, Collaert N, Jurczak M, Simoen E, Claeys C, Martino JA. Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 149-154. 2013 ; 90 149-154.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.sse.2013.02.038
    • Vancouver

      Almeida LM, Sasaki KRA, Caillat C, Aoulaiche M, Collaert N, Jurczak M, Simoen E, Claeys C, Martino JA. Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 149-154. 2013 ; 90 149-154.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.sse.2013.02.038
  • Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP

    Assunto: MICROELETRÔNICA

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      SIMOEN, Eddy et al. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0051ecst. Acesso em: 28 abr. 2024.
    • APA

      Simoen, E., Caño de Andrade, M. G., Almeida, L. M., Aoulaiche, M., Caillat, C., Jurczak, M., & Claeys, C. (2012). On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0051ecst
    • NLM

      Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1149/04901.0051ecst
    • Vancouver

      Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1149/04901.0051ecst

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